STMicroelectronics’ STPOWER MDmesh M9 and DM9 N-channel super-junction multi-drain silicon power MOSFETs are ideal for switched-mode power supplies (SMPS) in applications from data-centre servers and 5G infrastructure to flat-panel televisions.
The first devices to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9. Both have very low on-resistance (RDS(on)) per unit area, which maximises power density and permits compact system dimensions. Each has a maximum RDS(on) (RDS(on)max) in its category, at 45mΩ for the STP65N045M9 and 43mΩ for the STP60N043DM9.
The gate threshold voltage (VGS(th)), typically 3.7V for the STP65N045M9 and 4.0V for STP60N043DM9, minimises both turn-on and turn-off switching losses compared with the earlier MDmesh M5 and M6/DM6. The MDmesh M9 and DM9 series also feature a very low reverse recovery charge (Qrr) and reverse recovery time (trr).
A further feature of the MDmesh technology is an additional platinum diffusion process that ensures a fast intrinsic body diode. The peak diode-recovery slope (dv/dt) is greater than for earlier processes. All devices belonging to MDmesh DM9 technology are extremely rugged and can withstand dv/dt up to 120V/ns at 400V.